BU932RPFI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU932RPFI DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current-peak Base Current Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 500 450 5 15 30 1 5 60 150 -40~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.08 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU932RPFI TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 10mH 450 V VCE(sat) VBE(sat) ICES ICEO Collector-Emitter Saturation Voltage IC= 8 A; IB= 150mA 1.8 V Base-Emitter Saturation Voltage IC= 8 A; IB= 150mA VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125℃ VCE= 450V;IB= 0 2.2 1.0 5.0 1.0 V Collector Cutoff Current mA Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 mA hFE DC Current Gain IC= 5A; VCE= 10V 300 VECF C-E Diode Forward Voltage IF= 10A 2.8 V isc Website：www.iscsemi.cn