BU941

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU941 DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 500 400 5 15 30 1 5 180 200 -65~200 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.97 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP BU941 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0;L= 10mH 400 V VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE(sat)-3 ICES Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.6 V Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA B 1.8 V Collector-Emitter Saturation Voltage IC= 12 A; IB= 300mA B 2.0 V Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V Base-Emitter Saturation Voltage IC= 10 A; IB= 250mA B 2.5 V Base-Emitter Saturation Voltage IC= 12 A; IB= 300mA B 2.7 0.1 0.5 0.1 0.5 20 V Collector Cutoff Current VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125℃ VCE= 450V; IB= 0 VCE= 450V; IB= 0;Tj= 125℃ VEB= 5V; IC= 0 IC= 5A ; VCE= 10V 300 mA ICEO Collector Cutoff Current mA IEBO hFE Emitter Cutoff Current mA DC Current Gain VECF C-E Diode Forward Voltage IF= 10A 2.5 V isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU941 isc Website：www.iscsemi.cn