BU941ZP

INCHANGE Semiconductor isc Product Specification BU941ZP isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature APPLICATIONS ·Designed for use in automotive environment as electronic ignition power actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 350 5 15 30 1 5 155 175 -65~175 UNIT V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.97 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification MJW16010A isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCL VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE(sat)-3 ICEO IEBO hFE VECF PARAMETER Clamping Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain C-E Diode Forward Voltage IC= 100mA IC= 8A; IB= 0.1A B CONDITIONS MIN 350 TYP. MAX 500 1.8 1.8 2.0 2.2 2.5 2.7 0.1 0.5 20 UNIT V V V V V V V mA mA IC= 10A; IB= 0.25A IC= 12A; IB= 0.3A IC= 8A; IB= 0.1A B IC= 10A; IB= 0.25A IC= 12A; IB= 0.3A VCE= 300V; IB= 0 VCE= 300V; IB= 0;TC=125℃ VEB= 5V; IC=0 IC= 5A ; VCE= 10V IF= 10A 300 2.5 V Switching times;Inductive load Storage Time Fall Time 15 0.5 μs μs tstg tf IC= 7A; IB= 70mA, RBE= 47Ω; Vclamp= 300V, VBE= 0; L= 7mH B isc Website：www.iscsemi.cn 2