BUF405AXI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF405AXI DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Designed for high reliability industrial and professional power driving applications such as motor drivers and off-line switching power supplies. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1000 450 7 7.5 15 3 4.5 39 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.2 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICER ICEV IEBO PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current CONDITIONS IC= 0.2A; IB= 0; L= 25mH IE= 50mA; IC= 0 IC= 2.5A; IB= 0.25A IC= 5A; IB= 1A B BUF405AXI MIN 450 7 TYP. MAX UNIT V V 0.8 0.5 0.9 1.1 0.1 0.5 0.1 0.5 1.0 V V V V mA mA mA IC= 2.5A; IB= 0.25A IC= 5A; IB= 1A B VCE= VCEV; RBE= 5Ω VCE= VCEV; RBE= 5Ω;TC=100℃ VCE= VCEV; VBE= -1.5V VCE= VCEV; VBE= -1.5V;TC=100℃ VEB= 5V; IC= 0 Switching Times ts tf Storage Time Fall Time 0.8 0.05 μs μs IC= 2.5A;IB1= 0.25A;VCC= 50V; VBB= -5V, RBB= 2.4Ω;L= 1mH Vclamp= 400V isc Website：www.iscsemi.cn