BUF410

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410 DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 850 450 7 15 30 3 4.5 125 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICER ICEV IEBO PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current CONDITIONS IC= 0.2A; IB= 0; L= 25mH IE= 50mA; IC= 0 IC= 5A; IB= 0.5A B BUF410 MIN 450 7 TYP. MAX UNIT V V 0.8 0.5 0.9 1.1 0.2 1.0 0.2 1.0 1.0 V V V V mA mA mA IC= 10A; IB= 2A IC= 5A; IB= 0.5A B IC= 10A; IB= 2A VCE=VCEV; RBE= 100Ω VCE=VCEV; RBE= 100Ω;TC=100℃ VCE= VCEV; VBE= -1.5V VCE= VCEV; VBE= -1.5V;TC=100℃ VEB= 5V; IC= 0 Switching Times; Resistive Load ts tf Storage Time Fall Time 0.8 0.05 μs μs IC= 5A;IB1= 0.5A;VCC= 50V; VBB= -5V, RBB= 1.2Ω;L= 0.5mH Vclamp= 400V isc Website：www.iscsemi.cn