BUH515

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH515 DESCRIPTION ・With TO-3PML package ・High voltage ・High speed switching APPLICATIONS ・Horizontal deflection for color TV and monitors. ・Switch mode power supplies. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Base current-peak Total power dissipation Operating junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 700 10 8 12 5 8 50 150 -65~150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUH515 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=10mA; IC=0 IC=5A ;IB=1.25A 10 V Collector-emitter saturation voltage 1.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.25A VCE=1500V; VBE=0 Tj=125℃ VEB=5V; IC=0 1.3 0.2 2 100 V ICES Collector cut-off current mA μA IEBO Emitter cut-off current hFE DC current gain IC=5A ; VCE=5V 6 12 Switching times μs ts Storage time IC=5A;IB1=1.25A;IB2=2.5A; VCC=400V 2.7 3.9 tf Fall time 190 280 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ℃/W Rth j-c Thermal resistance from junction to case 2.5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH515 Fig.2 Outline dimensions 3