BUH515D

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH515D DESCRIPTION ・With TO-3PML package ・High voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of large screen color TV receivers PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 8 15 5 8 50 -65~150 UNIT V V V A A A A W ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUH515D TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A 1.5 V VBEsat ICES-1 Base-emitter saturation voltage IC=5A ;IB=1.25A VCE=1300V; VBE=0 VCE=1500V; VBE=0 Tj=125℃ VEB=5V; IC=0 1.3 V μA Collector cut-off current 10 0.2 2 200 ICES-2 Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=5A ; VCE=5V 5 10 VF Diode forward voltage IF=5A 2 V Switching times μs ts Storage time IC=5A;IB1=1.5A;-IB2=2.5A; VCC=400V 2.4 3.6 tf Fall time 170 260 ns THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT ℃/W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH515D Fig.2 Outline dimensions 3