BUH517

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH517 DESCRIPTION ・With TO-3PML package ・High voltage,high speed ・Low collector saturation voltage APPLICATIONS ・Horizontal deflection stage in standard and high reslolution displays for TV’s and monitors. ・Switching power supplies for TV’s and monitors. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Operating junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1700 700 10 8 15 5 8 60 150 -65~150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IE=10mA; IC=0 IC=5A ;IB=1.25A IC=5A ;IB=1.25A VCE=1700V; VBE=0 Tj=125℃ VEB=5V; IC=0 IC=5A ; VCE=5V 6 MIN 700 10 TYP. BUH517 MAX UNIT V V 1.5 1.3 1.0 2.0 100 V V mA μA Switching times ts tf Storage time IC=5A;IB1=1.25A;IB2=2.5A; VCC=400V Fall time 190 280 ns 2.7 3.9 μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.08 UNIT ℃/W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH517 Fig.2 Outline dimensions 3