BUH715

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH715 DESCRIPTION ・With TO-3PML package ・High voltage,high speed APPLICATIONS ・Horizontal deflection for monitors. ・Switching mode power supplies PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 10 10 20 5 10 57 150 -65~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.2 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUH715 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA 700 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=10mA IC=7A ;IB=1.5A 10 V Collector-emitter saturation voltage 1.5 V VBEsat Base-emitter saturation voltage IC=7A ;IB=1.5A VCE=1500V; VBE=0 Tj=125℃ VEB=5V; IC=0 1.3 1 2 100 V ICES Collector cut-off current mA μA IEBO Emitter cut-off current hFE DC current gain IC=7A ; VCE=5V 8 16 Switching times μs ts Storage time IC=7A;IB1=1.5A;IB2=3.5A; VCC=400V 2.1 3.1 tf Fall time 140 210 ns 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH715 Fig.2 Outline dimensions 3