BUH715

BUH715

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    BUH715 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
BUH715 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH715 DESCRIPTION ・With TO-3PML package ・High voltage,high speed APPLICATIONS ・Horizontal deflection for monitors. ・Switching mode power supplies PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 10 10 20 5 10 57 150 -65~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.2 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUH715 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA 700 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=10mA IC=7A ;IB=1.5A 10 V Collector-emitter saturation voltage 1.5 V VBEsat Base-emitter saturation voltage IC=7A ;IB=1.5A VCE=1500V; VBE=0 Tj=125℃ VEB=5V; IC=0 1.3 1 2 100 V ICES Collector cut-off current mA μA IEBO Emitter cut-off current hFE DC current gain IC=7A ; VCE=5V 8 16 Switching times μs ts Storage time IC=7A;IB1=1.5A;IB2=3.5A; VCC=400V 2.1 3.1 tf Fall time 140 210 ns 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH715 Fig.2 Outline dimensions 3
BUH715
物料型号: - BUH715

器件简介: - BUH715是一款由Inchange Semiconductor生产的Silicon NPN Power Transistors,具有TO-3PML封装,适用于高电压、高速应用,如显示器的水平偏转和开关电源模式。

引脚分配: - 1号引脚:基极(Base) - 2号引脚:集电极(Collector) - 3号引脚:发射极(Emitter)

参数特性: - 集电极-基极电压(VcBO):1500V - 集电极-发射极电压(VCEO):700V - 发射极-基极电压(VEBO):10V - 集电极电流(DC)(Ic):10A - 集电极电流(脉冲)(IcM):20A - 基极电流(DC)(lB):5A - 基极电流(脉冲)(IBM):10A - 总功率耗散(Ptot):57W - 工作结温(TJ):150°C - 存储温度(Tstg):-65~150°C

热特性: - 从结到外壳的热阻(Rthjc):2.2°C/W

功能详解: - 在Tj=25℃的条件下,BUH715的主要特性参数包括: - 集电极-发射极维持电压(VCEO(SUS)):700V - 发射极-基极击穿电压(V(BR)EBO):10V - 集电极-发射极饱和电压(VcEsat):1.5V - 基极-发射极饱和电压(VBEsat):1.3V - 集电极截止电流(IcEs):1~2mA - 发射极截止电流(IEBO):100μA - 直流电流增益(hFE):8~16 - 存储时间(ts):2.1~3.1us - 下降时间(t1):140~210ns

应用信息: - 水平偏转显示器和开关电源模式

封装信息: - TO-3PML封装,具体尺寸见图2。
BUH715 价格&库存

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