BUJ403A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUJ403A DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Desined for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1200 550 7 6 10 3 5 100 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 10mA; IB= 0, L= 25mH IC= 2A; IB= 0.4A B BUJ403A MIN 550 TYP. MAX UNIT V 1.0 1.5 1 2 0.1 0.1 13 20 13 15.5 47 25 V V mA mA mA IC= 2A; IB= 0.4A B VCE=RatedVCES ;VBE= 0 VCE=RatedVCES ;VBE= 0;TC=125℃ VCE= 550V; IB= 0 VEB= 7V; IC= 0 IC= 1mA ; VCE= 5V IC= 0.5A ; VCE= 5V IC= 2A ; VCE= 5V IC= 3A ; VCE= 5V Switching Times ;Resistive Load ton ts tf Turn-on Time Storage Time Fall Time IC= 2.5A; IB1= -IB2= 0.5A; RL= 75Ω; VBB2= 4V 0.5 3.0 0.3 μs μs μs isc Website：www.iscsemi.cn