INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUL1203E
DESCRIPTION ·High Voltage ·High Speed Switching
APPLICATIONS ·Electronic ballasts for fluorescent lighting
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL VCBO VCES VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range
VALUE 1200 1200 550 9 5 8 2 4 100 150 -65~150
UNIT V V V V A A A A W ℃ ℃
IBM PC Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 ICES ICEO hFE-1 hFE-2 hFE-3 hFE-4 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0, L= 25mH IC= 1A; IB= 0.2A
B
BUL1203E
MIN 550
TYP.
MAX
UNIT V
0.5 0.7 1.5 1.5 1.5 0.1 0.1 10 10 14 9 32 28
V V V V V mA mA
IC= 2A; IB= 0.4A
B
IC= 3A; IB= 1A
B
IC= 2A; IB= 0.4A
B
IC= 3A; IB= 1A
B
VCE= 1200V; VBE= 0 VCE= 550V; IB= 0 IC= 1mA; VCE= 5V IC= 10mA; VCE= 5V IC= 0.8A; VCE= 3V IC= 2A; VCE= 5V
Switching Times ;Resistive Load ton ts tf Turn-on Time Storage Time Fall Time IC= 2A; IB1= 0.4A; IB2= -0.8A; tp= 30μs; VCC= 150V 0.5 3.0 0.3 μs μs μs
isc Website:www.iscsemi.cn
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