BUL45

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Fast switching speed ・High voltage APPLICATIONS ・Designed for use in electronic ballast and In switchmode power supplies PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUL45 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (peak) Base current Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 700 400 9 5 10 2 75 150 -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.65 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEO ICES IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=0.1 A ;IB=0;L=25mH IC=1A ;IB=0.2 A IC=2A ;IB=0.4 A IC=1A ;IB=0.2 A IC=2A ;IB=0.4 A VCE =RatedVCEO; IB=0; VCE =RatedVCES; VEB=0; TC=125℃ VEB=9V; IC=0 IC=0.3A;VCE=5V IC=2A;VCE=1V IC=10mA;VCE=5V IE=0; VCB=10V;f=1MHz IC=0.5 A ; VCE=10V 14 7 10 14 22 50 12 MIN 400 0.175 0.25 0.84 0.89 TYP. BUL45 MAX UNIT V 0.25 0.4 1.2 1.25 100 10 100 0.1 34 V V V V μA μA mA 75 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUL45 Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3