BUL59

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL59 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 2A ·High Speed Switching APPLICATIONS ·Designed for use in lighting applications and low cost switchmode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current-Continuous Base Current-Peak Collector Power Dissipation TC=25℃ Junction Temperature Storage Temperature Range VALUE 850 400 9 8 16 4 8 90 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC Ti Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-A PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.39 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICES IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 10mA; L= 25mH IC= 2A ;IB= 0.4A IC= 5A ;IB= 1A IC= 2A ;IB= 0.4A IC= 5A ;IB= 1A VCE= RatedVCES;VBE=0 VCE= RatedVCES;VBE=0,TC= 125℃ VEB= 9V; IC= 0 IC= 2A; VCE= 5V IC= 5A; VCE= 5V IC= 8A; VCE= 10V 8 6 4 MIN 400 TYP. BUL59 MAX UNIT V 0.5 1.5 1.2 1.6 0.2 0.5 0.1 40 30 V V V V mA mA Switching Times, Inductive Load ts tf Storage Time Fall Time IC= 2A; VCC= 250V; IB(on)= 0.4A; RBB= 0Ω VBE(off)= -5V; L= 200μH 0.8 0.15 μs μs isc Website：www.iscsemi.cn