BUL742C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL742C DESCRIPTION ·Collector–Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 0.8A APPLICATIONS ·Designed for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEW VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current-Continuous Base Current-peak Collector Power Dissipation TC=25℃ Junction Temperature Storage Temperature Range VALUE 900 500 400 11 5 7.5 2.5 4 50 150 -65~150 UNIT V V V V A A A A W ℃ ℃ IBM PC Ti Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICES hFE-1 hFE-2 hFE-3 hFE-4 COB VCEW fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain DC Current Gain DC Current Gain DC Current Gain Output Capacitance Collector-Emitter Working Voltage Current-Gain—Bandwidth Product CONDITIONS IC= 500mA; L= 125mH, Imeasure= 100mA IE= 1mA; IC= 0 IC= 0.8A; IB= 0.2A IC= 2.5A; IB= 0.8A IC= 0.8A; IB= 0.2A IC= 2.5A; IB= 0.8A VCES= 900V; VEB=0 VCES= 900V; VEB=0,TC= 150℃ IC= 10mA; VCE= 2V IC= 0.8A; VCE= 2V IC= 2.5A; VCE= 2V IC= 5A; VCE= 2V IE= 0; VCB= 10V; f= 1MHz VS= 50V; L= 1mH; IC= 2.5A; IB1= -IB2= 0.5A; VBE(off)= -5V IC= 0.2A; VCE= 10V; f= 1MHz 500 4 15 15 7 4 MIN 400 11 BUL742C TYP. MAX UNIT V V 0.2 0.4 1.0 1.2 10 200 V V V V μA 60 pF V MHz isc Website：www.iscsemi.cn