BUP22A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUP22A DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 350V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switchingregulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage VBE=0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 650 350 9 8 20 4 6 125 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUP22A TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L=25 mH B 350 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.67A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.67A B 1.5 1 2 10 V ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ VEB= 9V; IC=0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 1A; VCE= 5V 25 Switching Times; Resistive Load ton Turn-On Time 0.5 μs ts Storage Time IC= 6A; IB1= -IB2= 0.67A 3.0 μs tf Fall Time 0.3 μs isc Website：www.iscsemi.cn 2