BUP22B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUP22B/C DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)-BUP22B = 450V(Min)-BUP22C ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switchingregulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUP22B BUP22C BUP22B VCEO Collector-Emitter Voltage BUP22C VEBO IC ICM IB B VALUE 750 UNIT VCES Collector- Emitter Voltage VBE=0 V 850 400 V 450 9 8 20 4 6 125 150 -65~150 V A A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUP22B/C TYP. MAX UNIT BUP22B VCEO(SUS) Collector-Emitter Sustaining Voltage BUP22C IC= 0.1A ;IB= 0; L=25 mH B 400 V 450 BUP22B VCE(sat) Collector-Emitter Saturation Voltage BUP22C IC= 6A; IB= 0.8A B 1.5 V IC= 6A; IB= 1A B 1.5 BUP22B VBE(sat) Base-Emitter Saturation Voltage BUP22C IC= 6A; IB= 0.8A B 1.5 V IC= 6A; IB= 1A B 1.5 1 2 10 ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ VEB= 9V; IC=0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 1A; VCE= 5V 25 Switching Times; Resistive Load ton Turn-On Time For BUP22B IC= 6A; IB1= -IB2= 0.8A 0.5 μs ts Storage Time For BUP22C IC= 6A; IB1= -IB2= 1A 3.0 μs tf Fall Time 0.3 μs isc Website：www.iscsemi.cn 2