BUP22BF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)-BUP22BF = 450V(Min)-BUP22CF ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switchingregulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUP22BF BUP22CF BUP22BF BUP22CF VALUE 750 V 850 400 V 450 9 8 20 4 6 34 150 -65~150 V A A A A W ℃ ℃ UNIT BUP22BF/CF VCES Collector- Emitter Voltage VBE=0 VCEO Collector-Emitter Voltage VEBO IC ICM IB B Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 3.7 35 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUP22BF/CF MIN TYP. MAX UNIT BUP22BF VCEO(SUS) Collector-Emitter Sustaining Voltage BUP22CF IC= 0.1A ;IB= 0; L=25 mH B 400 V 450 BUP22BF VCE(sat) Collector-Emitter Saturation Voltage BUP22CF IC= 6A; IB= 0.8A B 1.5 V IC= 6A; IB= 1A B 1.5 BUP22BF VBE(sat) Base-Emitter Saturation Voltage BUP22CF IC= 6A; IB= 0.8A B 1.5 V IC= 6A; IB= 1A B 1.5 1 2 10 ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ VEB= 9V; IC=0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 1A; VCE= 5V 25 Switching Times; Resistive Load ton Turn-On Time For BUP22BF IC= 6A; IB1= -IB2= 0.8A 1.0 μs ts Storage Time For BUP22CF IC= 6A; IB1= -IB2= 1A 4.5 μs tf Fall Time 0.7 μs isc Website：www.iscsemi.cn 2