BUP40

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BUP40 DESCRIPTION ·High Collector Current-IC= -6A ·Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@ IC= 3A, IB= -0.1A ·High Switching Speed ·Complement to Type BUP41 B APPLICATIONS ·For audio amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -6 A PC 10 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUP40 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.1A B -1.1 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= -3A; IB= -0.1A B -1.4 V μA μA Collector Cutoff Current VCB= -40V; IE= 0 -1.0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -1.0 hFE-1 DC Current Gain IC= -1A; VCE= -2V 100 500 hFE-2 DC Current Gain IC= -5A; VCE= -5V 40 fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 150 MHz COB Output Capacitance IE= 0; VCB= -10V 40 pF isc Website：www.iscsemi.cn 2