BUP41

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUP41 DESCRIPTION ·High Collector Current-IC= 6A ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 3A, IB= 0.1A ·High Switching Speed ·Complement to Type BUP40 B APPLICATIONS ·For audio amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 6 A PC 10 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUP41 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.1A B 0.4 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 3A; IB= 0.1A B 1.4 V μA μA Collector Cutoff Current VCB= 40V; IE= 0 1.0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 hFE-1 DC Current Gain IC= 1A; VCE= 2V 100 500 hFE-2 DC Current Gain IC= 3A; VCE= 2V 40 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 120 MHz COB Output Capacitance IE= 0; VCB= 10V 25 pF isc Website：www.iscsemi.cn 2