BUS11

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS11/A DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUS11 450V (Min)-BUS11A APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUS11 BUS11A BUS11 BUS11A VEBO IC ICM IB B MAX 850 UNIT VCES Collector- Emitter Voltage(VBE= 0) V 1000 400 V 450 9 5 10 2 4 100 200 -65~200 V A A A A W ℃ ℃ VCEO Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.75 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUS11 VCEO(SUS) Collector-Emitter Sustaining Voltage BUS11A BUS11 VCE(sat) Collector-Emitter Saturation Voltage BUS11A BUS11 VBE(sat) Base-Emitter Saturation Voltage BUS11A ICES IEBO hFE Collector Cutoff Current Emitter Cutoff Current DC Current Gain IC= 2.5A; IB= 0.5A VCE=VCESMmax; VBE= 0 VCE= VCESMmax;VBE= 0;TJ= 125℃ VEB= 9V; IC= 0 IC= 1A ; VCE= 5V 15 IC= 2.5A; IB= 0.5A IC= 3A; IB= 0.6A B BUS11/A CONDITIONS MIN 400 TYP. MAX UNIT IC= 0.1A ; IB= 0; L= 25mH 450 IC= 3A; IB= 0.6A B V 1.5 V 1.5 1.4 V 1.4 1 2 10 50 mA mA Switching Times , Resistive Load ton tstg tf Turn-On Time For BUS11 IC= 3A ;IB1= -IB2= 0.6A Storage Time For BUS11A IC= 2.5A ;IB1= -IB2= 0.5A Fall Time 0.8 4.0 μs μs 1.0 μs isc Website：www.iscsemi.cn