BUS12

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUS12 DESCRIPTION ・With TO-3 package ・High voltage,high speed APPLICATIONS ・Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 850 400 10 8 125 200 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICES IEBO hFE PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A; L=25mH IE=10m A;IC=0 IC=5 A;IB=1 A IC=8 A;IB=2.5 A IC=5 A;IB=1 A IC=8 A;IB=2.5 A VCE=850V;VBE=0 TC=125℃ VEB=10V; IC=0 IC=1A ; VCE=5V 15 MIN 400 10 TYP. BUS12 MAX UNIT V 1.5 3.0 1.4 1.8 1.0 3.0 1.0 V V V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUS12 Fig.2 Outline dimensions 3