BUS13A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUS13A DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature Tmb=25℃ Open emitter Open base Open collector CONDITIONS MAX 1000 450 9 15 30 6 9 175 200 -65~200 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; IB=0; L=25mH IC=8A; IB=1.6A IC=8A; IB=1.6A VCE=RatedBVCEO; VBE=0 TC=125℃ VEB=9V; IC=0 IC=1A ; VCE=5V 15 MIN 450 BUS13A TYP. MAX UNIT V 1.5 1.6 1 4 10 50 V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=8A; IB1=- IB2=1.6A 1.0 4.0 0.8 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUS13A Fig.2 Outline dimensions 3