BUS14

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUS14 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature Tmb=25℃ Open emitter Open base Open collector CONDITIONS MAX 850 400 9 30 50 6 10 250 200 -65~200 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 0.7 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; IB=0; L=25mH IC=20A; IB=4A IC=20A; IB=4A VCE=RatedBVCEO; VBE=0 TC=125℃ VEB=9V; IC=0 IC=2A ; VCE=5V 15 MIN 400 TYP. BUS14 MAX UNIT V 1.5 1.7 1 5 10 50 V V mA mA Switching times Turn-on time Storage time Fall time IC=20A; IB1=- IB2=4A 1.0 4.0 0.8 μs μs μs ton ts tf 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUS14 Fig.2 Outline dimensions 3