BUS21B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS21B/C DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUS21B 450V (Min)-BUS21C APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUS21B BUS21C BUS21B BUS21C VEBO IC ICM IB B MAX 750 UNIT VCES Collector- Emitter Voltage(VBE= 0) V 850 400 V 450 9 5 10 2 4 100 200 -65~200 V A A A A W ℃ ℃ VCEO Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.75 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUS21B VCEO(SUS) Collector-Emitter Sustaining Voltage BUS21C BUS21B VCE(sat) Collector-Emitter Saturation Voltage BUS21C BUS21B VBE(sat) Base-Emitter Saturation Voltage BUS21C ICES IEBO hFE-1 Collector Cutoff Current Emitter Cutoff Current DC Current Gain BUS21B hFE-2 DC Current Gain BUS21C IC= 3A ; VCE= 1.5V 6 IC= 3A; IB= 0.4A B BUS21B/C CONDITIONS MIN 400 TYP. MAX UNIT IC= 0.1A ; IB= 0; L= 25mH 450 1.5 V V IC= 3A; IB= 0.5A B 1.5 1.5 V 1.5 1 10 25 7.5 mA mA IC= 3A; IB= 0.4A B IC= 3A; IB= 0.5A B VCE=VCESMmax; VBE= 0 VEB= 9V; IC= 0 IC= 0.5A ; VCE= 10V isc Website：www.iscsemi.cn