BUS23B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS23B/C DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUS23B 450V (Min)-BUS23C APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUS23B BUS23C BUS23B BUS23C VEBO IC ICM IB B MAX 750 UNIT VCES Collector- Emitter Voltage(VBE= 0) V 850 400 V 450 9 15 30 6 9 175 150 -65~150 V A A A A W ℃ ℃ VCEO Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.7 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUS23B VCEO(SUS) Collector-Emitter Sustaining Voltage BUS23C BUS23B VCE(sat) Collector-Emitter Saturation Voltage BUS23C BUS23B VBE(sat) Base-Emitter Saturation Voltage BUS23C ICES IEBO hFE Collector Cutoff Current Emitter Cutoff Current DC Current Gain IC= 10A; IB= 1.67A VCE=VCESMmax; VBE= 0 VEB= 9V; IC= 0 IC= 1.5A ; VCE= 5V IC= 10A; IB= 1.67A IC= 10A; IB= 1.33A IC= 10A; IB= 1.33A IC= 0.1A ; IB= 0; L= 25mH 450 CONDITIONS MIN 400 BUS23B/C TYP. MAX UNIT V 1.5 V 1.5 1.6 V 1.6 1 10 25 mA mA Switching Times , Resistive Load ton tstg tf Turn-On Time For BUS23B IC= 10A ;IB1= -IB2= 1.33A Storage Time For BUS23C IC= 10A; IB1= -IB2= 1.67A Fall Time 0.27 2.0 μs μs 0.7 μs isc Website：www.iscsemi.cn