BUS48AP

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits Absolute maximum ratings(Ta=25℃) SYMBOL VCEV VCEO VEBO IC ICM IB B BUS48AP PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1000 450 7 15 30 5 20 150 175 -65~175 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE (sat)-2 VBE(sat) ICER ICEV IEBO hFE COB PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance CONDITIONS IC= 0.2A; IB= 0; L= 25mH IE= 50mA; IC= 0 IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A;TC= 100℃ B B BUS48AP MIN 450 7 MAX UNIT V V 1.5 2.0 5.0 1.6 1.6 0.5 3.0 0.2 2.0 0.1 8 350 V V V mA mA mA IC= 12A; IB= 2.4A IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A;TC= 100℃ B B VCE=rated VCER; RBE= 10Ω VCE=rated VCER; RBE= 10Ω;TC=125℃ VCE=rated VCES; VBE(off)= 1.5V VCE=rated VCES; VBE(off)= 1.5V;TC=125℃ VEB= 5V; IC= 0 IC= 8A; VCE= 5V IE= 0; VCB= 10V, ftest= 1MHz pF Switching times Resistive Load td tr ts tf Delay Time Rise Time IC= 10A; IB1= 2A; VCC= 250V; VBE(off)= 5V, Duty Cycle≤2% Storage Time Fall Time 2.0 0.4 0.2 0.7 μs μs μs μs isc Website：www.iscsemi.cn