BUT11

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11 DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 850 400 7 5 10 2 100 150 -65~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUT11 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0, L= 25mH 400 V VCE(sat) VBE(sat) ICES IEBO Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.3 1 2 10 V Collector Cutoff Current VCE=RatedVCES ;VBE= 0 VCE=RatedVCES ;VBE= 0;TC=125℃ VEB= 9V; IC= 0 mA Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 5mA ; VCE= 5V 10 35 hFE-2 DC Current Gain IC= 0.5A ; VCE= 5V 10 35 Switching Times ;Resistive Load μs μs μs ton ts tf Turn-on Time 1.0 Storage Time IC= 3A;IB1= -IB2= 0.6A 4.0 Fall Time 0.8 isc Website：www.iscsemi.cn