BUT11F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11F DESCRIPTION ·High Voltage ·High Speed Switching · APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 850 400 9 5 10 2 4 20 150 -65~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 3.95 UNIT K/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0 IC= 3A; IB= 0.6A IC= 3A; IB= 0.6A VCE= 850V; VBE= 0 VCE= 850V; VBE= 0; Tj= 125℃ VEB= 9V; IC= 0 IC= 5mA ; VCE= 5V IC= 0.5A ; VCE= 5V 10 10 MIN 450 TYP. BUT11F MAX UNIT V 1.5 1.3 1.0 2.0 10 35 35 V V mA mA Switching Times; Resistive Load ton ts tf Turn-on Time Storage Time Fall Time IC= 2.5A; IB1= -IB2= 0.5A 1.0 4.0 0.8 μs μs μs isc Website：www.iscsemi.cn