BUT11FI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11FI DESCRIPTION ·High Voltage ·High Speed Switching · APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 850 400 9 5 10 2 4 35 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.57 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0 IC= 3A; IB= 0.6A B BUT11FI MIN 400 TYP. MAX UNIT V 1.5 1.3 1.0 2.0 10 10 10 35 35 V V mA mA IC= 3A; IB= 0.6A B VCE= 850V; VBE= 0 VCE= 850V; VBE= 0; Tj= 125℃ VEB= 9V; IC= 0 IC= 5mA; VCE= 5V IC= 0.5A; VCE= 5V Switching Times; Resistive Load Turn-on Time Storage Time Fall Time IC= 2.5A; IB1= -IB2= 0.5A; VCC= 250V 1.0 4.0 0.8 μs μs μs ton ts tf isc Website：www.iscsemi.cn