BUT131A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 450V(Min)- BUT131 500V(Min)- BUT131A ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUT131 BUT131A BUT131 VCEO Collector-Emitter Voltage BUT131A VEBO IC ICM IB B BUT131/A VALUE 850 UNIT VCES Collector-Emitter Voltage VBE= 0 V 1000 450 V 500 6 5 10 4 8 80 150 -65~150 V A A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.56 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUT131/A TYP. MAX UNIT BUT131 VCEO(SUS) Collector-Emitter Sustaining Voltage BUT131A IC= 0.1A ;IB= 0; L= 10mH B 450 V 500 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.2A 1.0 V VCE(sat)-2 VBE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4A B 2.5 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.4A B 1.5 0.25 1.5 1.0 V ICEV Collector Cutoff Current VCE=VCESmax;VBE=-1.5V VCE=VCESmax;VBE=-1.5V;TJ=100℃ VEB= 6V; IC=0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 5A ; VCE= 5V 5 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1kHz 200 pF Switching Times; Resistive Load μs μs μs ton tstg tf Turn-On Time 0.35 Storage Time IC= 3A; IB1= 0.4A; IB2= -0.8A 1.2 Fall Time 0.07 isc Website：www.iscsemi.cn 2