BUT18

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUT18 BUT18A ・ Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER BUT18 VCBO Collector-base voltage BUT18A BUT18 VCEO Collector-emitter voltage BUT18A VEBO IC ICM IB IBM Ptot Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 450 9 6 12 3 6 110 150 -65~150 V A A A A W ℃ ℃ Open emitter 1000 400 V CONDITIONS VALUE 850 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BUT18 VCEO(SUS) Collector-emitter sustaining voltage BUT18A VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A IC=0.1A; IB=0;L=25mH CONDITIONS BUT18 BUT18A MIN 400 TYP. MAX UNIT V 450 1.5 V VBEsat Base-emitter saturation voltage BUT18 IC=4A; IB=0.8A VCE=850V ;VBE=0 Tj=125℃ VCE=1000V ;VBE=0 Tj=125℃ VEB=9V; IC=0 IC=5mA ; VCE=5V IC=1A ; VCE=5V 10 10 1.3 1.0 2.0 V ICES Collector cut-off current BUT18A mA 1.0 2.0 10 35 35 mA IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=4A; IB1=-IB2=0.8A VCC=250V 1.0 4.0 0.8 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUT18 BUT18A Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3