BUT18F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION BUT18F BUT18AF ・ Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER BUT18F VCBO Collector-base voltage BUT18AF BUT18F VCEO Collector-emitter voltage BUT18AF VEBO IC ICM IB IBM Ptot Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 450 9 6 12 3 6 33 150 -65~150 V A A A A W ℃ ℃ Open emitter 1000 400 V CONDITIONS VALUE 850 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BUT18F VCEO(SUS) Collector-emitter sustaining voltage BUT18AF VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A IC=0.1A; IB=0;L=25mH CONDITIONS BUT18F BUT18AF MIN 400 TYP. MAX UNIT V 450 1.5 V VBEsat Base-emitter saturation voltage BUT18F IC=4A; IB=0.8A VCE=850V ;VBE=0 Tj=125℃ VCE=1000V ;VBE=0 Tj=125℃ VEB=9V; IC=0 IC=10mA ; VCE=5V IC=1A ; VCE=5V 10 10 1.3 1.0 2.0 V ICES Collector cut-off current BUT18AF mA 1.0 2.0 10 35 35 mA IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=4A; IB1=-IB2=0.8A VCC=250V 1.0 4.0 0.8 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUT18F BUT18AF Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3