BUT211

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) ·High Speed Switching APPLICATIONS ·Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 850 400 9 5 10 2 4 100 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.25 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUT211 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 25mH 400 V VCE(sat) VBE(sat) ICES IEBO Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4A B 2.0 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.4A B 1.3 1.0 2.0 10 V Collector Cutoff Current VCE= 850V; VBE= 0 VCE= 850V; VBE= 0; Tj= 125℃ VEB= 9V; IC= 0 mA Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 1A; VCE= 2V 13 30 hFE-2 DC Current Gain IC= 3A; VCE= 2V 7.5 Switching Times; Resistive Load μs μs ts tf Storage Time IC= 3A; IB1= 0.3A; IB2= -0.6A Fall Time 2.0 0.8 hFE-1 Classifications 1 13-20 2 18-25 3 23-30 isc Website：www.iscsemi.cn