BUT22CF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)- BUT22BF 450V(Min)- BUT22CF ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUT22BF BUT22CF BUT22BF VCEO Collector-Emitter Voltage BUT22CF VEBO IC ICM IB B BUT22BF/CF VALUE 750 UNIT VCES Collector-Emitter Voltage VBE= 0 V 850 400 V 450 9 8 20 4 6 23 150 -65~150 V A A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak tp< 20ms Base Current-Continuous Base Current-Peak tp< 20ms Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 5.5 55 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUT22BF IC= 0.1A ;IB= 0; L= 25mH B BUT22BF/CF CONDITIONS MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 450 BUT22CF BUT22BF BUT22CF BUT22BF BUT22CF ICES IEBO hFE Collector Cutoff Current Emitter Cutoff Current DC Current Gain IC= 6A; IB= 0.8A B VCE(sat) Collector-Emitter Saturation Voltage 1.5 V 1.5 1.5 V 1.5 1.0 10 25 mA mA IC= 6A; IB= 1.0A B VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.8A B IC= 6A; IB= 1.0A B VCE= VCESmax;VBE= 0 VEB= 9V; IC=0 IC= 1A ; VCE= 5V Switching Times; Resistive Load ton tstg tf Turn-On Time Storage Time Fall Time For BUT22CF IC= 6A; IB1= -IB2= 1.0A 1.0 4.5 0.7 μs μs μs For BUT22BF IC= 6A; IB1= -IB2= 0.8A isc Website：www.iscsemi.cn 2