BUT46

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT46 DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·General purpose switching ·Switch mode power supply ·Electronic ballasts for fluorescent lighting ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCES VCEO VEBO IC IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 850 400 7 5 3 100 150 -65~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.76 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUT46 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.3 0.1 1.0 1.0 V ICBO Collector Cutoff Current VCB= 850V; IE= 0 VCB= 850V; IE= 0; TC=125℃ VEB= 7V; IC= 0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 0.5A; VCE= 5V 10 35 isc Website：www.iscsemi.cn