BUT54

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT54 DESCRIPTION ·High Voltage ·High Speed Switching ·High Power Dissipation APPLICATIONS ·Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCES VCER VCEO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage RBE≤100Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 800 800 430 6 8 10 4 100 150 -55~150 UNIT V V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUT54 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0, L= 125mH IC= 0.5mA; IB= 0, RBE≤100Ω B 430 V V(BR)CER Collector-Emitter Breakdown Voltage 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 5.0 V VBE(sat) ICES Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 2.0 1.0 2.0 20 45 V Collector Cutoff Current VCE= 800V; VBE= 0 VCE= 800V; VBE= 0; TC=150℃ IC= 1A; VCE= 5V mA hFE-1 DC Current Gain hFE-2 DC Current Gain IC= 4A; VCE= 5V 5.5 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 10 MHz Switching Times ;Resistive Load μs μs toff Turn-off Time IC=4A; IB1=-IB2=1.25A; tp=20μs 4.0 tf Fall Time 1.0 isc Website：www.iscsemi.cn