BUT56A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A DESCRIPTION ・With TO-220C package ・High voltage;high speed ・High power dissipation APPLICATIONS ・Switching mode power supply PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolut maximum ratings (Ta=25℃) SYMBOL PARAMETER BUT56 VCBO Collector-base voltage BUT56A BUT56 VCEO Collector-emitter voltage BUT56A VEBO IC ICM IBM Ptot Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 450 6 8 10 4 100 150 -65~150 V A A A W ℃ ℃ Open emitter 1000 400 V CONDITIONS VALUE 800 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting case MAX 1.25 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BUT56 V(BR)CEO Collector-emitter breakdown voltage BUT56A V(BR)EBO VCEsat VBEsat Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage BUT56 ICES Collector cut-off current BUT56A hFE-1 DC current gain BUT56 hFE-2 DC current gain BUT56A fT Transition frequency IC=3A ; VCE=2V IC=0.5A ;VCE=10V;f=1.0MHz IE=1mA ;IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCE=800V; VBE=0 Tj=150℃ VCE=1000V; VBE=0 Tj=150℃ IC=1A ; VCE=5V IC=4A ; VCE=5V IC=100mA ;LC=125mH CONDITIONS BUT56 BUT56A MIN 400 TYP. MAX UNIT V 450 6 5.0 2.0 1.0 2.0 mA 1.0 2.0 15 5.5 4 10 MHz 45 V V V Switching times toff tf Turn-off time IC=4A ;IB1=-IB2=1.25A tp=20μs Fall time 1 4 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUT56 BUT56A Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3