BUT76

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT76 BUT76A DESCRIPTION ・With TO-220C package ・High voltage;high speed ・High power dissipation APPLICATIONS ・Switching mode power supply ・Motor control and relay driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolut maximum ratings (Ta=25℃) SYMBOL PARAMETER BUT76 VCBO Collector-base voltage BUT76A BUT76 VCEO Collector-emitter voltage BUT76A VEBO IC ICM IBM Ptot Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 450 7 12 20 6 110 150 -65~150 V A A A W ℃ ℃ Open emitter 1000 400 V CONDITIONS VALUE 850 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting case MAX 1.13 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BUT76 V(BR)CEO Collector-emitter breakdown voltage BUT76A V(BR)EBO Emitter-base breakdown voltage BUT76 VCEsat Collector-emitter saturation voltage BUT76A BUT76 VBEsat Base-emitter saturation voltage BUT76A BUT76 ICES Collector cut-off current BUT76A hFE COB fT DC current gain Output capacitance Transition frequency IC=5A ;IB=1A VCE=850V; VBE=0 Tj=150℃ VCE=1000V; VBE=0 Tj=150℃ IC=8A ; VCE=3V IE=0 ;VCB=10V;f=1MHz IC=1A ;VCE=10V IC=5A ;IB=1A IC=6A ;IB=1.2A IE=1mA ;IC=0 IC=6A ;IB=1.2A IC=500mA ;LC=125mH CONDITIONS BUT76 BUT76A MIN 400 TYP. MAX UNIT V 450 6 V 1.5 V 1.6 V 0.5 2.0 mA 0.5 2.0 3.2 150 7 pF MHz Switching times resistive load ton ts tf Turn-on time Storage time Fall time For BUT76A IC=5A ;IB1=-IB2=1A;VCE=150V 1.0 3.0 0.8 μs μs μs For BUT76 IC=6A ;IB1=-IB2=1.2A;VCE=150V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUT76 BUT76A Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3