BUT93

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT93 DESCRIPTION ·High Voltage ·High Speed Switching ·High Power Dissipation APPLICATIONS ·Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 600 350 5 4 6 2 50 150 -65~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUT93 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0, L= 125mH 350 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.3A; IB= 30mA 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 750mA B 1.0 V VBE(sat) ICES Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.1 0.2 1.5 10 V Collector Cutoff Current VCE= 600V; VBE= 0 VCE= 600V; VBE= 0; TC=125℃ IC= 1A; VCE= 2V mA hFE DC Current Gain fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 9 MHz Switching Times ;Resistive Load μs μs ts Storage Time IC= 1A; IB1= 0.2A; IB2= -0.4A 2.0 tf Fall Time 0.25 isc Website：www.iscsemi.cn