BUV10

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 DESCRIPTION ·High Switching Speed ·High Current Capability APPLICATIONS ·Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 160 160 140 125 7 25 30 6 150 200 -65~200 UNIT V V V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV10 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 125 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEO Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.0 V Collector-Emitter Saturation Voltage IC= 20A ;IB= 2A IC= 10A; IB= 1A 2.0 V Base-Emitter Saturation Voltage 1.5 V Collector Cutoff Current VCE= 100V; IB= 0 VCE= 160V;VBE= -1.5V VCE= 160V;VBE= -1.5V;TC=125℃ VEB= 5V; IC= 0 1.5 1.5 6.0 0.5 mA ICEX Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 10A ; VCE= 4V 20 60 hFE-2 fT DC Current Gain IC= 20A ; VCE= 4V IC= 1A; VCE= 15V 10 Current-Gain—Bandwidth Product 8 MHz isc Website：www.iscsemi.cn