BUV21

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV21 DESCRIPTION ・With TO-3 package ・High DC current gain@IC=12A ・Fast switching times ・Low collector saturation voltage APPLICATIONS ・Designed for high current,high speed and high power applications. PINNING(see fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION ・ Absolute maximum ratings (Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 250 200 7 40 50 8 150 -65~200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 0.7 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEX ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A; IB=0;L=25mH IE=50mA; IC=0 IC=12 A;IB=1.2A IC=25 A;IB=3A IC=25A;IB=3A VCE=250V;VBE=-1.5V TC=125℃ VCE=160V;IB=0 VEB=5V; IC=0 IC=12A ; VCE=2V IC=25A ; VCE=4V IC=2A ; VCE=15V; f=4MHz 8.0 20 10 MIN 200 7 TYP. BUV21 MAX UNIT V V 0.6 1.5 1.5 3.0 12 3.0 1.0 60 V V V mA mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=25A ;IB1=-IB2=3A VCC=100V ;RC=4Ω 1.0 1.8 0.4 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV21 Fig.2 Outline dimensions 3