INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER BUV26F BUV26AF BUV26F VCEO Collector-Emitter Voltage BUV26AF VEBO IC ICM IB
B
BUV26F/AF
VALUE 180
UNIT
VCES
Collector-Emitter Voltage VBE= 0
V 200 90 V 100 5 14 25 4 6 18 150 -65~150 V A A A A W ℃ ℃
Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range
IBM PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 7.0 55 UNIT ℃/W ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER BUV26F IC= 0.2A ;IB= 0; L= 25mH
B
BUV26F/AF
CONDITIONS
MIN 90
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
V 100
BUV26AF BUV26F BUV26AF BUV26F BUV26AF BUV26F BUV26AF BUV26F BUV26AF IC= 12A; IB= 1.2A IC= 10A; IB= 1.0A IC= 6A; IB= 0.6A
B
VCE(sat)-1
Collector-Emitter Saturation Voltage
1.5 V 1.0 0.6 V 0.5 2.0 V 1.5 1.2 V 1.2 1.0 3.0 1.0 mA mA mA
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
B
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 12A; IB= 1.2A IC= 10A; IB= 1.0A IC= 6A; IB= 0.6A
B
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
B
ICEX ICES IEBO
Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current
VCE=VCESmax;VBE=-1.5V,TJ=125℃ VCE=VCESmax;VBE=0,TJ=125℃ VEB= 5V; IC=0
Switching Times; Resistive Load ton tstg tf Turn-On Time Storage Time Fall Time For BUV26AF IC= 10A; IB1= 1.0A; IB2= -2.0A 0.4 0.45 0.12 0.6 1.0 0.25 μs μs μs
For BUV26F IC= 12A; IB1= 1.2A; IB2= -2.4A
isc Website:www.iscsemi.cn
2
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