BUV28

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV28 DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・High frequency and efficiency converters ・Switching regulators ・Motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings (Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 400 200 7 10 2 70 150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.785 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV28 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30m A ;IB=0 200 V VCEsat-1 VCEsat-2 Collector-emitter saturation voltage IC=3A ;IB=0.3 A IC=6A; IB=0.6A 0.7 V Collector-emitter saturation voltage 1.5 V VBEsat Base-emitter saturation voltage IC=6A; IB=0.6A 2.0 V ICBO Collector cut-off current VCB =300V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA Switching times resistive load ton ts Turn-on time IC=5A;VCC=150V IB1=-IB1=0.5A; 1.0 ms μs μs Storage time 1.5 tf Fall time 0.3 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV28 Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3