BUV37

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV37 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 10A APPLICATIONS ·Designed for use in automotive ignition circuits. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current - Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 600 400 8 15 30 4 100 150 -65~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.25 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP BUV37 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A; IB= 0; L= 15mH B 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7 A; IB= 70mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10 A; IB= 150mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10 A; IB= 150mA B 2.7 V ICEO Collector Cutoff Current VCE= 400V; IB= 0 0.25 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 40 mA hFE DC Current Gain IC= 15A; VCE= 5V 20 isc Website：www.iscsemi.cn