BUV40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV40 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @IC= 5.5A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE=-1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current- Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 250 125 7 20 30 4 6 120 200 -65~200 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.46 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV40 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 125 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 ICER Collector-Emitter Saturation Voltage IC= 5.5A; IB= 0.275A 0.8 V Collector-Emitter Saturation Voltage IC= 11A ;IB= 1.1A B 0.9 V Collector-Emitter Saturation Voltage IC= 15A ;IB= 1.875A 1.2 V Base-Emitter Saturation Voltage IC= 11A ;IB= 1.1A B 1.6 V Base-Emitter Saturation Voltage IC= 15A ;IB= 1.875A VCE= 250V;RBE= 10Ω VCE= 250V;RBE= 10Ω;TC=100℃ VCE= 250V;VBE= -1.5V VCE= 250V;VBE= -1.5V;TC=100℃ VEB= 5V; IC= 0 1.9 1.0 5.0 1.0 5.0 1.0 V Collector Cutoff Current mA ICEV Collector Cutoff Current mA IEBO Emitter Cutoff Current mA Switching Times, Resistive Load μs μs μs tr ts tf Rise Time IC= 15A; IB1= 1.8A; VCC= 100V; RB2= 1.3Ω; VBB= -5V, tp= 30μs 1.0 Storage Time 1.0 Fall Time 0.3 isc Website：www.iscsemi.cn