BUV42

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV42 DESCRIPTION ・With TO-3 package ・Fast switching times ・Low collector saturation voltage APPLICATIONS ・For switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC≤25℃ Open emitter Open base Open collector CONDITIONS VALUE 350 250 7 12 18 2.5 4 120 200 -65~200 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.46 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV42 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; L=25mH 250 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 IC=2A; IB=0.13A Tj=100℃ IC=4A; IB=0.4A Tj=100℃ IC=6A; IB=0.75A Tj=100℃ IC=4A; IB=0.4A Tj=100℃ IC=6A; IB=0.75A Tj=100℃ VCE=VCEV; VBE=-1.5V TC=100℃ VEB=5V; IC=0 7 0.8 0.9 0.9 1.2 1.2 1.5 1.3 V VCEsat-1 Collector-emitter saturation voltage V VCEsat-2 Collector-emitter saturation voltage V VCEsat-3 Collector-emitter saturation voltage V VBEsat-1 Base-emitter saturation voltage V VBEsat-2 Base-emitter saturation voltage 1.5 0.5 2.0 1 V ICEV Collector cut-off current mA IEBO Emitter cut-off current mA Switching times resistive load tr Rise time IC=6A ;IB1=0.75A RB2=3.3Ω; VCC=200V VBB=-5V; Tp=30μs 0.3 0.4 μs ts Storage time 1.0 1.6 μs tf Fall time 0.15 0.3 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV42 Fig.2 Outline dimensions 3