BUV42A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV42A DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.9V(Max.) @IC= 4A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE=-1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current- Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 400 300 7 12 18 2.5 4 120 200 -65~200 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.46 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUV42A TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 0.9 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.3 0.5 2.5 0.5 2.0 1.0 V ICER Collector Cutoff Current VCE= 400V;RBE= 10Ω VCE= 400V;RBE= 10Ω;TC=100℃ VCE= 400V;VBE= -1.5V VCE= 400V;VBE= -1.5V;TC=100℃ VEB= 5V; IC= 0 mA ICEV Collector Cutoff Current mA IEBO Emitter Cutoff Current mA isc Website：www.iscsemi.cn