BUV46FI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV46FI DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) ·High Speed Switching APPLICATIONS ·Designed for high voltage, fast switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCES VCEX VCEO VEBO IC IB B PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage VBE= -2.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 850 850 400 7 5 3 30 150 -65~150 UNIT V V V V A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 4.12 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICER ICEX IEBO PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage CONDITIONS IC= 0.1A; IB= 0 IC= 2.5A; IB= 0.5A MIN 400 BUV46FI TYP. MAX UNIT V 1.5 V Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.7A 5.0 V Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC= 2.5A; IB= 0.5A VCE= 850V; RBE=10Ω VCE= 850V; RBE=10Ω;TC=125℃ VCE= 850V; VBE=-2.5V VCE= 850V; VBE=-2.5V;Tj= 125℃ VEB= 7V; IC= 0 1.3 0.1 1.0 0.3 2.0 1.0 V mA mA mA Switching Times ton ts tf Turn-on Time Storage Time Fall Time IC= 2.5A;IB1=-IB2= 0.5A;VCC= 150V 1.0 3.0 0.8 μs μs μs isc Website：www.iscsemi.cn