BUV47

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV47 BUV47B DESCRIPTION ・With TO-3PN package. ・High voltage. ・Very high switching speed. APPLICATIONS ・Suited for 220V switchmode power supply, DC and AC motor control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 850 400 7 9 15 3 90 -65~150 -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.38 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV47 BUV47B CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEO(SUS) PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage BUV47 BUV47B BUV47 BUV47B BUV47 BUV47B CONDITIONS IE=10mA; IC=0 IC=0.2A; IB=0;L=25mH IC=5A; IB=1A 1.5 IC=6A; IB=1.2A IC=8A; IB=2.5A 3.0 IC=9A; IB=3A IC=5A; IB=1A 1.6 IC=6A; IB=1.2A VCE=850V ;VBE=-2.5V VEB=5V; IC=0 IC=10A ; VCE=5V 7 10 0.15 1.0 14 mA mA V V V MIN 10 400 TYP. MAX UNIT V V VCEsat-1 Collector-emitter saturation voltage VCEsat-2 Collector-emitter saturation voltage VBEsat Base-emitter saturation voltage ICEX IEBO hFE Collector cut-off current Emitter cut-off current DC current gain Switching times : ton ts tf Turn-on time Storage time Fall time IC=5A IB1=- IB2=1.0A VCC=150V 1.0 3.0 0.8 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV47 BUV47B Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3