BUV47AFI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV47AFI DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V(Min.) ·Collector-Emitter Saturation Voltage:VCE(sat)= 1.5V(Max.)@IC= 5A ·High Speed Switching APPLICATIONS ·Designed for 220V switchmode power supply, DC and AC motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCER VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage RBE= 10Ω Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1000 1000 450 7 9 15 8 10 55 150 -65~150 UNIT V V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.27 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage CONDITIONS IC= 0.1A; IB= 0; L= 25mH IE= 50mA; IC= 0 MIN 450 7 BUV47AFI TYP. MAX UNIT V V VCE(sat)-1 VCE(sat)-2 VBE(sat) ICER ICEV IEBO Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A B 3.0 V Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC= 5A; IB= 1A B 1.6 0.4 3.0 0.15 1.5 1.0 V mA mA mA VCE= 850V; RBE=10Ω VCE= 850V; RBE=10Ω;TC=125℃ VCE= 850V; VBE=-2.5V VCE= 850V; VBE=-2.5V;Tj= 125℃ VEB= 5V; IC= 0 Switching Times, Resistive Load ton ts tf Turn-on Time Storage Time Fall Time IC= 5A; IB1= -IB2= 1A; VCC= 150V 0.7 3.0 0.8 μs μs μs isc Website：www.iscsemi.cn